Si3402
2. Typical Application Schematics
To
Ethernet PHY
C5
RJ-45
CT1
FB
C4
R3
C3
CT2
SP1
Si3402
D1
R2
R1
SP2
RDET
SWO
L1
EROUT
RCL
C6
C2
C1
R4
C7
Figure 1. Schematic—Class 0 with Non-Isolated 5 V Output*
*Note: This is a simplified schematic. See “AN296: Using the Si3400/1/2 PoE PD Controller in Isolated and Non-Isolated
Designs” for more details and complete application schematics.
Table 7. Component Listing—Class 0 with 5 V Output
Item
C1
Type
Capacitor
Value
15 μF
Toler.
20%
Rating
100 V
Notes
Switcher supply capacitor. Several paral-
lel capacitors are used for lower ESR.
C2
C3
Capacitor
Capacitor
0.1 μF
1000 μF
20%
20%
100 V
10 V
PD input supply capacitor.
Switcher load capacitor - 1000 μF in par-
allel with and X5R 22 μF for lower ESR.
C4
C5
C6
C7
R1
R2
R3
R4
D1
L1
Capacitor
Capacitor
Capacitor
Capacitor
Resistor
Resistor
Resistor
Resistor
Diode
Inductor
0.1 μF
0.1 μF
3.3 nF
150 pF
25.5 k ?
8.66 k ?
2.87 k ?
30.1 k ?
33 μH
20%
10%
10%
10%
1%
1%
1%
1%
20%
16 V
16 V
16 V
16 V
1/16 W
1/16 W
1/16 W
1/16 W
100 V
3.5 A
VDD bypass capacitor.
Softstart capacitor.
Compensation capacitor.
Compensation capacitor.
Detection resistor.
Feedback resistor divider.
Feedback resistor divider.
Feedback compensation resistor.
Schottky diode; part no. PDS5100.
Coilcraft part no. DO5010333.
8
Rev. 1.31
相关PDF资料
SI3460-EVB BOARD EVAL POE FOR SI3460
SI8220BD-A-IS IC ISODRIVER 2.5A OPTO IN 16SOIC
SI8402AB-B-IS IC I2C ISOLATOR BIDIR 8-SOIC
SI8405AB-A-IS1 IC ISOLATOR 10M 6CH 2.5K 16SOIC
SI8423BD-B-IS ISOLATOR 2CH 5KV 150M 16SOIC
SI8435BB-C-IS1 IC ISOLATOR DGTL 3CH 16SOIC
SI8442BB-C-IS1 IC ISOLATOR DGTL 4CH 16SOIC
SI8451BB-A-IS1 IC ISOLATOR DGTL 5CH 16SOIC
相关代理商/技术参数
Si3402ISO-EVB 功能描述:电源管理IC开发工具 PoE Pwrd-Isolated Low-EMI Eval Board RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
SI3403-A-GM 制造商:Silicon Laboratories Inc 功能描述:POE POWERED DEVICE (UP TO 17W, LOW-EMI) - RECOMMENDED FOR AL - Trays 制造商:Silicon Laboratories Inc 功能描述:IC POE CTLR TO 17W LOW EMI 20QFN 制造商:Silicon Laboratories Inc 功能描述:PoE Powered Device (up to 17W, low-EMI)
Si3403-A-GMR 制造商:Silicon Laboratories Inc 功能描述:POE POWERED DEVICE (UP TO 17W, LOW-EMI) - RECOMMENDED FOR AL - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:PoE Powered Device (up to 17W, low-EMI)
SI3403DV-T1-E3 功能描述:MOSFET 20V 5.0A 3.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3403DV-T1-GE3 功能描述:MOSFET 20V 5.0A 3.2W 70mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3407DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
Si3407DV-T1-E3 功能描述:MOSFET 20V 8.0A 4.2W 24mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3407DV-T1-GE3 功能描述:MOSFET 20V 8.0A 4.2W 37mohm @ 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube